eISSN: 2618-6446
Latest Issue Archive Future Issues About Us JOURNALS

SETSCI - Volume (2018)
ISAS 2018 - Ist International Symposium on Innovative Approaches in Scientific Studies, Kemer-Antalya, Turkey, Apr 11, 2018

Pathological Element-Based Memelement Circuits (ISAS 2018_250)
Yunus Babacan1*
1Department of Electrical and Electronic Engineering, Erzincan University, Erzincan, Turkey
* Corresponding author: ybabacan@erzincan.edu.tr
Published Date: 2018-06-23   |   Page (s): 366-370   |    91     5

ABSTRACT This study presents the modelling of the pathological elements based memelements. More than forty years ago, Chua predicted the existence of memristor (memory+resistor) which is the fourth fundamental passive circuit element. In 2008, Hewlett Packard (HP) researchers demonstrated the physical implementation of the new element which provides the missing relationship between the magnetic flux (ϕ) and the electric charge (q). Memelements are gaining popularity among the  researchers because of the some unique behaviors. Many memelements are designed using active circuit elements because of their advantages such as low energy consumption, wide band width, and compatible with nonlinear circuit element design.
Pathological elements are gaining the popularity because of their capability of modelling active circuits. All presented memelements consist of transistors and active circuit elements. In this study, pathological circuit equivalents of memelements are presented.  
KEYWORDS Memelements, pathological elements, circuit modelling.
REFERENCES [1] L.O. Chua, “Memristor-the missing circuit element”, IEEE Transactions on Circuit Theory, 507-519, 1971.

[2] D.B. Strukov, G.S. Snider, D.R. Stewart and R. S. Williams, “The missing memristor found”, Nature, 80–83, 2008.

[3] Y. Babacan, F. Kacar, K. Gurkan, “A spiking and bursting neuron circuit based on memristor”, Neurocomputing, 86-91, 2016.

[4] H. Kim et al., “Memristor emulator for memristor circuit applications”, IEEE Transactions on Circuits and Systems I: Regular Papers, 2422-2431, 2012.

[5] Ş. Yener and H. Kuntman, “A new CMOS based memristor implementation”, Applied Electronics International Conference, pp.345-348, 2012.

[6] A. Yesil, Y. Babacan and F. Kacar, “A new DDCC based memristor emulator circuit and its applications”, Microelectronics Journal, 2014.

[7]Y. Babacan and F. Kacar, “Floating Memristor Emulator with Subthreshold Region”, Analog Integrated Circuits and Signal Processing, 15, 2016.

[8] Y. Babacan and F. Kacar, “Memristor Emulator with SpikeTimingDependent-Plasticity”, International Journal of Electronics and Communications, 16-22, 2017.

[9] L.T. Bruton, “RC Active Circuits, Englewood Cliffs”, NJ:Prentice- Hall, chapter 2 and 3, 1980.

[10] A.C. Davis, “The significance of nullators, norators and nullors in active network theory”, Radio and Electronic Engineer, pp. 256–267, 1967.

[11] C. Sanchez-Lopez, F.V. Fernández, E. Tlelo-Cuautle, D.T. Sheldon, “Pathological Element-Based Active Device Models and Their Application to Symbolic Analysis”, IEEE Transactions On Circuits And Systems—I: Regular Papers, 58(6), 2011.

[12] C. Sanchez-Lopez, E. Tlelo-Cuautle, “Symbolic Behavioral Model Generation of Current-Mode Analog Circuits”, IEEE International Symposium on Circuits and Systems, ISCAS, 2009.

SET Technology - Turkey

eISSN  : 2618-6446

E-mail : info@set-science.com
+90 533 2245325

Tokat Technology Development Zone Gaziosmanpaşa University Taşlıçiftlik Campus, 60240 TOKAT-TURKEY
©2018 SET Technology