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SETSCI - Volume (2018)
ISAS 2018 - Ist International Symposium on Innovative Approaches in Scientific Studies, Kemer-Antalya, Turkey, Apr 11, 2018

Pathological Element-Based Memelement Circuits (ISAS 2018_250)
Yunus Babacan1*
1Department of Electrical and Electronic Engineering, Erzincan University, Erzincan, Turkey
* Corresponding author: ybabacan@erzincan.edu.tr
Published Date: 2018-06-23   |   Page (s): 366-370   |    56     4

ABSTRACT This study presents the modelling of the pathological elements based memelements. More than forty years ago, Chua predicted the existence of memristor (memory+resistor) which is the fourth fundamental passive circuit element. In 2008, Hewlett Packard (HP) researchers demonstrated the physical implementation of the new element which provides the missing relationship between the magnetic flux (ϕ) and the electric charge (q). Memelements are gaining popularity among the  researchers because of the some unique behaviors. Many memelements are designed using active circuit elements because of their advantages such as low energy consumption, wide band width, and compatible with nonlinear circuit element design.
Pathological elements are gaining the popularity because of their capability of modelling active circuits. All presented memelements consist of transistors and active circuit elements. In this study, pathological circuit equivalents of memelements are presented.  
KEYWORDS Memelements, pathological elements, circuit modelling.
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